Magnetic tunnel junctions for MRAM devices
US7149105B2 · kind B2 · utility
31Cited by
7References
74Claims
0Family size
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Key dates
| Filing date | Feb 24, 2004 |
| Grant date | Dec 12, 2006 |
| Priority date | — |
| Expiry date | Sep 29, 2024 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C11/15
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Methods of manufacturing MTJ memory cells and structures thereof. A diffusion barrier is disposed between an anti-ferromagnetic layer and a pinned layer of an MTJ memory cell to improve thermal stability of the MTJ memory cell. The diffusion barrier may comprise an amorphous material or a NiFe alloy. An amorphous material may be disposed adjacent a bottom surface of a tunnel junction, within a free layer, or both. An MTJ memory cell with improved thermal stability and decreased Neel coupling is achieved.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.