Method of depositing dielectric materials including oxygen-doped silicon carbide in damascene applications
US7151053B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 28, 2005 |
| Grant date | Dec 19, 2006 |
| Priority date | — |
| Expiry date | Apr 28, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76807
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods are provided for depositing an oxygen-doped dielectric layer. The oxygen-doped dielectric layer may be used for a barrier layer or a hardmask. In one aspect, a method is provided for processing a substrate including positioning the substrate in a processing chamber, introducing a processing gas comprising an oxygen-containing organosilicon compound, carbon dioxide, or combinations thereof, and an oxygen-free organosilicon compound to the processing chamber, and reacting the processing gas to deposit an oxygen-doped dielectric material on the substrate, wherein the dielectric material has an oxygen content of about 15 atomic percent or less. The oxygen-doped dielectric material may be used as a barrier layer in damascene or dual damascene applications.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.