TiSiN film forming method, diffusion barrier TiSiN film, semiconductor device, method of fabricating the same and TiSiN film forming system
US7153773B2 · kind B2 · utility
7Cited by
10References
15Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 17, 2004 |
| Grant date | Dec 26, 2006 |
| Priority date | — |
| Expiry date | Jun 17, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/682
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A TiSiN film is used as a barrier metal layer for a semiconductor device to prevent the diffusion of Cu. The TiSiN film is formed by a plasma CVD process or a thermal CVD process. TiCl4 gas, a silicon hydride gas and NH3 gas are used as source gases for forming the TiSiN film by the thermal CVD process. TiCl4 gas, a silicon hydride gas, H2 gas and N2 gas are used as source gases for forming a TiSiN film by the plasma CVD process.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.