Methods of forming openings, and methods of forming container capacitors

US7153778B2 · kind B2 · utility

Assignee

• Micron Technology, Inc. · US

Inventors

• Brett W. Busch · Boise, US
• Luan C. Tran · Meridian, US
• Ardavan Niroomand · Boise, US
• Fred Fishburn · Boise, US
• Yoshiki Hishiro · Boise, US
• Ulrich Boettiger · Boise, US
• Richard Holscher · Boise, US

Key dates

• Filing date: Feb 20, 2004
• Grant date: Dec 26, 2006
• Expiry date: Mar 28, 2024

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y10S438/946
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A patterned mask can be formed as follows. A first patterned photoresist is formed over a masking layer and utilized during a first etch into the masking layer. The first etch extends to a depth in the masking layer that is less than entirely through the masking layer. A second patterned photoresist is subsequently formed over the masking layer and utilized during a second etch into the masking layer. The combined first and second etches form openings extending entirely through the masking layer and thus form the masking layer into the patterned mask. The patterned mask can be utilized to form a pattern in a substrate underlying the mask. The pattern formed in the substrate can correspond to an array of capacitor container openings. Capacitor structure can be formed within the openings. The capacitor structures can be incorporated within a DRAM array.