Method for fabricating nitride semiconductor, method for fabricating nitride semiconductor device, and nitride semiconductor device
US7160748B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 24, 2005 |
| Grant date | Jan 9, 2007 |
| Priority date | — |
| Expiry date | Jul 23, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/825
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The method for fabricating a nitride semiconductor of the present invention includes the steps of: (1) growing a first semiconductor layer made of a first group III nitride over a substrate by supplying a first group III source and a group V source containing nitrogen; and (2) growing a second semiconductor layer made of a second group III nitride on the first semiconductor layer by supplying a second group III source and a group V source containing nitrogen. At least one of the steps (1) and (2) includes the step of supplying a p-type dopant over the substrate, and an area near the interface between the first semiconductor layer and the second semiconductor layer is grown so that the density of the p-type dopant locally increases.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.