Pulsed plasma processing method and apparatus
US7166233B2 · kind B2 · utility
275Cited by
19References
25Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 15, 2002 |
| Grant date | Jan 23, 2007 |
| Priority date | — |
| Expiry date | Jul 26, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/31116
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
In a method for performing a plasma-assisted treatment on a substrate in a reactor chamber by: introducing at least one process gas into the reactor chamber; and creating a plasma within the reactor chamber by establishing an RF electromagnetic field within the chamber and allowing the field to interact with the process gas, the electromagnetic field is controlled to have an energy level which varies cyclically between at least two values each sufficient to maintain the plasma, such that each energy level value is associated with performance of a respectively different treatment process on the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.