Method for ion implanting insulator material to reduce dielectric constant
US7166524B2 · kind B2 · utility
22Cited by
147References
38Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 1, 2004 |
| Grant date | Jan 23, 2007 |
| Priority date | — |
| Expiry date | Mar 24, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76254
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
An integrated microelectronic circuit has a multi-layer interconnect structure overlying the transistors consisting of stacked metal pattern layers and insulating layers separating adjacent ones of said metal pattern layers. Each of the insulating layers is a dielectric material with plural gas bubbles distributed within the volume of the dielectric material to reduce the dielectric constant of the material, the gas bubbles being formed by ion implantation of a gaseous species into the dielectric material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.