Method of two dimensional feature model calibration and optimization

US7175940B2 · kind B2 · utility

Assignee

• ASML Masktools B.V. · NL

Inventors

• Thomas Laidig · Richmond, US
• Jang Fung Chen · Cupertino, US
• Xuelong Shi · San Jose, US
• Ralph Schlief · Mountain View, US
• Uwe Hollerbach · Fremont, US
• Kurt E. Wampler · Sunnyvale, US

Key dates

• Filing date: Oct 9, 2002
• Grant date: Feb 13, 2007
• Expiry date: Dec 1, 2022

Classification

• Technology area (CPC G): Physics
• CPC primary: G03F1/68
• WIPO field: Optics
• WIPO sector: Instruments

Abstract

A method for generating a photolithography mask for optically transferring a pattern formed in the mask onto a substrate utilizing an imaging system. The method includes the steps of: (a) defining a set of calibration patterns, which are represented in a data format; (b) printing the calibration patterns on a substrate utilizing the given imaging system; (c) determining a first set of contour patterns corresponding to the calibration patterns imaged on the substrate; (d) generating a system pseudo-intensity function, which approximates the imaging performance of the imaging system; (e) determining a second set of contour patterns by utilizing the system pseudo-intensity function to define how the calibration patterns will be imaged in the substrate; (f) comparing the first set of contour patterns and the second set of contour patterns to determine the difference therebetween; (g) adjusting the system pseudo-intensity function until the difference between the first set of contour patterns and the second set of contour patterns is below a predefined criteria; and (h) utilizing the adjusted system pseudo-intensity function to modify the mask so as to provide for optical proximity corr…