Method for making a semiconductor device that includes a metal gate electrode
US7176090B2 · kind B2 · utility
46Cited by
28References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 7, 2004 |
| Grant date | Feb 13, 2007 |
| Priority date | — |
| Expiry date | Sep 7, 2024 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/926
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for making a semiconductor device is described. That method comprises forming on a substrate a dielectric layer and a sacrificial structure that comprises a first layer and a second layer, such that the second layer is formed on the first layer and is wider than the first layer. After the sacrificial structure is removed to generate a trench, a metal gate electrode is formed within the trench.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.