magnetic memory layers thermal pulse transitions
US7177178B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 2, 2005 |
| Grant date | Feb 13, 2007 |
| Priority date | — |
| Expiry date | Dec 2, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N50/10
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A ferromagnetic thin-film based digital memory having a bit structures therein a magnetic material film in which a magnetic property thereof is maintained below a critical temperature above which such magnetic property is not maintained, and may also have a plurality of word line structures each with heating sections located across from the magnetic material film in a corresponding one of the bit structures. These bit structures are sufficiently thermally isolated to allow selected currents in the adjacent word lines or in the bit structure, or both, to selectively heat the bit structure to approach the critical temperature. Such bit structures may have three magnetic material layers each with its own critical temperature for maintaining versus not maintaining a magnetic property thereof.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.