Behavior based programming of non-volatile memory
US7177199B2 · kind B2 · utility
150Cited by
17References
57Claims
0Family size
Assignee
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Key dates
| Filing date | Oct 20, 2003 |
| Grant date | Feb 13, 2007 |
| Priority date | — |
| Expiry date | Feb 29, 2024 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C16/3459
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
The process for programming a set of memory cells is improved by adapting the programming process based on behavior of the memory cells. For example, a set of program pulses is applied to the word line for a set of flash memory cells. A determination is made as to which memory cells are easier to program and which memory cells are harder to program. Bit line voltages (or other parameters) can be adjusted based on the determination of which memory cells are easier to program and which memory cells are harder to program. The programming process will then continue with the adjusted bit line voltages (or other parameters).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.