Magneto resistance random access memory element
US7184300B2 · kind B2 · utility
5Cited by
236References
43Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 9, 2003 |
| Grant date | Feb 27, 2007 |
| Priority date | — |
| Expiry date | Jan 9, 2023 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C11/1675
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A method to switch a scalable magnetoresistive memory cell including the steps of providing a magnetoresistive memory device sandwiched between a word line and a digit line so that current waveforms can be applied to the word and digit lines at various times to cause a magnetic field flux to rotate the effective magnetic moment vector of the device by approximately 180°. The magnetoresistive memory device includes N ferromagnetic layers that are anti-ferromagnetically coupled. N can be adjusted to change the magnetic switching volume of the device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.