Method and resulting structure for PCMO film to obtain etching rate and mask to selectively by inductively coupled plasma
US7186658B2 · kind B2 · utility
7Cited by
1References
24Claims
0Family size
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Key dates
| Filing date | May 24, 2004 |
| Grant date | Mar 6, 2007 |
| Priority date | — |
| Expiry date | Jun 29, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B63/20
Abstract
A high selectivity and etch rate with innovative approach of inductively coupled plasma source. Preferably, the invention includes a method using plasma chemistry that is divided into main etch step of (e.g., Cl2+HBr+C4F8) gas combination and over etch step of (e.g., HBr+Ar). The main etch step provides a faster etch rate and selectivity while the over etch step will decrease the etch rate and ensure the stringer and residue removal without attacking the under layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.