Lanthanide oxide / hafnium oxide dielectric layers
US7192824B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 24, 2003 |
| Grant date | Mar 20, 2007 |
| Priority date | — |
| Expiry date | Aug 24, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/693
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Dielectric layers containing an atomic layer deposited hafnium oxide and an electron beam evaporated lanthanide oxide and a method of fabricating such a dielectric layer produce a reliable dielectric layer having an equivalent oxide thickness thinner than attainable using SiO2. Forming a layer of hafnium oxide by atomic layer deposition and forming a layer of a lanthanide oxide by electron beam evaporation, where the layer of hafnium oxide is adjacent and in contact with the layer of lanthanide, provides a dielectric layer with a relatively high dielectric constant as compared with silicon oxide. The dielectric can be formed as a nanolaminate of hafnium oxide and a lanthanide oxide.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.