Premature breakdown in submicron device geometries
US7195965B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 22, 2002 |
| Grant date | Mar 27, 2007 |
| Priority date | — |
| Expiry date | Oct 20, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/516
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The concept of the present invention describes a semiconductor device with a junction 504 between a lightly doped region 501 and a heavily doped region 502, wherein the junction has an elongated portion 504a and curved portions 504b. The doping concentration of the lightly doped region is configured so that it exhibits higher resistivity in the proximity 510 of the curved portion by an amount suitable to lower the electric field strength during device operation and thus to offset the increased field strength caused by the curved portion. As a consequence, the device breakdown voltage in the curved junction portion becomes equal to or greater than the breakdown voltage in the linear portion.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.