Method of feedback control of sub-atmospheric chemical vapor deposition processes
US7201936B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 18, 2002 |
| Grant date | Apr 10, 2007 |
| Priority date | — |
| Expiry date | Jun 18, 2022 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P90/02
- WIPO fieldControl
- WIPO sectorInstruments
Abstract
A method of film deposition in a sub-atmospheric chemical vapor deposition (CVD) process includes (a) providing a model for sub-atmospheric CVD deposition of a film that identifies one or more film properties of the film and at least one deposition model variable that correlates with the one or more film properties; (b) depositing a film onto a wafer using a first deposition recipe comprising at least one deposition recipe parameter that corresponds to the at least one deposition variable; (c) measuring a film property of at least one of said one or more film properties for the deposited film of step (b); (d) calculating an updated deposition model based upon the measured film property of step (c) and the model of step (a); and (e) calculating an updated deposition recipe based upon the updated model of step (d) to maintain a target film property. The method can be used to provide feedback to a plurality of deposition chambers or to control a film property other than film thickness.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.