Cross-linking polymer for organic anti-reflective coating, organic anti-reflective coating composition comprising the same and method for forming photoresist pattern using the same
US7205089B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 15, 2004 |
| Grant date | Apr 17, 2007 |
| Priority date | — |
| Expiry date | Apr 17, 2025 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC08F2810/20
- WIPO fieldMacromolecular chemistry, polymers
- WIPO sectorChemistry
Abstract
A cross-linking polymer for an organic anti-reflective coating that is able to improve the uniformity of an ultra-fine photoresist pattern formed using a photolithography process and an ArF light source with 194 nm wavelength. Organic anti-reflective coatings including the same and a method for forming a photoresist pattern using the same are also disclosed. The disclosed cross-linking polymer is capable of preventing scattered reflection from a bottom film layer, eliminating standing wave effect due to alteration of thickness of the photoresist film, and increasing uniformity of the thickness of photoresist pattern. At the same time, the disclosed cross-linking pattern increases the etching velocity of the organic anti-reflective coating so that it can be easily removed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.