Methods for fabricating magnetic cell junctions and a structure resulting and/or used for such methods
US7205164B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 19, 2005 |
| Grant date | Apr 17, 2007 |
| Priority date | — |
| Expiry date | Jan 19, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N50/01
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods for patterning a magnetic cell junction and a topography used for and/or resulting from such methods are provided. In particular, a method is provided which includes etching portions of a topography adjacent to a patterned photoresist layer to a level within a cap film of the topography, removing etch residues from the topography and subsequently etching the remaining portions of the cap film to expose an uppermost magnetic layer. Another method is provided which includes patterning a dielectric mask layer above a patterned upper portion of a magnetic cell junction and ion milling a lower portion of the magnetic cell junction in alignment with the mask layer. An exemplary topography which may result and/or may be used for such methods includes a stack of layers having a dual layer cap film arranged above at least two magnetic layers spaced apart by a tunneling layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.