Method of fabricating mobility enhanced CMOS devices

US7205206B2 · kind B2 · utility

Assignee

• International Business Machines Corporation · US

Inventors

• Michael P. Belyansky · Hopewell Junction, US
• Bruce B. Doris · Brewster, US
• Oleg Gluschenkov · Poughkeepsie, US

Key dates

• Filing date: Mar 3, 2004
• Grant date: Apr 17, 2007
• Expiry date: Mar 3, 2024

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/021

Abstract

Compressive or tensile materials are selectively introduced beneath and in alignment with spacer areas and adjacent to channel areas of a semiconductor substrate to enhance or degrade electron and hole mobility in CMOS circuits. A process entails steps of creating dummy spacers, forming a dielectric mandrel (i.e., mask), removing the dummy spacers, etching recesses into the underlying semiconductor substrate, introducing a compressive or tensile material into a portion of each recess, and filling the remainder of each recess with substrate material.