Creation of an electrically conducting bonding between two semi-conductor elements
US7208392B1 · kind B1 · utility
22Cited by
11References
9Claims
0Family size
Assignee
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Key dates
| Filing date | Sep 7, 2000 |
| Grant date | Apr 24, 2007 |
| Priority date | — |
| Expiry date | Sep 7, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/185
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of creating an electrically conducting bonding between a face of a first semiconductor element and a face of a second semiconductor element using heat treatment. The method applies the faces one against the other with the placing between them of at least one layer of a material configured to provide, after heat treatment, an electrically conducting bonding between the two faces. The deposited layers are chosen so that the heat treatment does not induce any reaction product between said material and the semi-conductor elements. Then, a heat treatment is carried out.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.