Magnetic random access memory with lower switching field
US7208808B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 23, 2005 |
| Grant date | Apr 24, 2007 |
| Priority date | — |
| Expiry date | Jun 23, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01F10/3254
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A magnetic random access memory with lower switching field is provided. The memory includes a first antiferromagnetic layer, a pinned layer formed on the first antiferromagnetic layer, a tunnel barrier layer formed on the pinned layer, a ferromagnetic free layer formed on the tunnel barrier layer, and a multi-layered metal layer. The multi-layered metal layer is formed by at least one metal layer, where the direction of the anisotropy axis of the antiferromagnetic layer and the ferromagnetic layer and that of the ferromagnetic free layer are arranged orthogonally. The provided memory has the advantage of lowering the switching field of the ferromagnetic layer, and further lowering the writing current.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.