Hydrogen treatment enhanced gap fill
US7211525B1 · kind B1 · utility
498Cited by
81References
21Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 16, 2005 |
| Grant date | May 1, 2007 |
| Priority date | — |
| Expiry date | Mar 16, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02274
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods of filling gaps on semiconductor substrates with dielectric film are described. The methods reduce or eliminate sidewall deposition and top-hat formation. The methods also reduce or eliminate the need for etch steps during dielectric film deposition. The methods include treating a semiconductor substrate with a hydrogen plasma before depositing dielectric film on the substrate. In some embodiments, the hydrogen treatment is used is conjunction with a high rate deposition process.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.