Sunil Shanker
51Patents
15h-index
34Co-inventors
80Inventor score
Filing activity: Mar 16, 2005 → Oct 2, 2014
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US7915139B1 | CVD flowable gap fill | Electricity | 775 | Active |
| US7582555B1 | CVD flowable gap fill | Electricity | 563 | Expired |
| US7888233B1 | Flowable film dielectric gap fill process | Electricity | 543 | Active |
| US7514375B1 | Pulsed bias having high pulse frequency for filling gaps with dielectric material | Electricity | 530 | Active |
| US8440259B2 | Vapor based combinatorial processing | Chemistry; Metallurgy | 518 | Active |
| US7211525B1 | Hydrogen treatment enhanced gap fill | Electricity | 498 | Expired |
| US7524735B1 | Flowable film dielectric gap fill process | Electricity | 124 | Active |
| US8143092B2 | Methods for forming resistive switching memory elements by heating deposited layers | Electricity | 88 | Active |
| US8580697B1 | CVD flowable gap fill | Electricity | 34 | Active |
| US8294219B2 | Nonvolatile memory element including resistive switching metal oxide layers | Electricity | 31 | Active |
| US7951683B1 | In-situ process layer using silicon-rich-oxide for etch selectivity in high AR gapfill | Electricity | 27 | Active |
| US8481403B1 | Flowable film dielectric gap fill process | Electricity | 24 | Active |
| US8809161B2 | Flowable film dielectric gap fill process | Electricity | 19 | Active |
| US7727906B1 | H2-based plasma treatment to eliminate within-batch and batch-to-batch etch drift | Electricity | 16 | Active |
| US8334015B2 | Vapor based combinatorial processing | Chemistry; Metallurgy | 15 | Active |
| US8318572B1 | Inexpensive electrode materials to facilitate rutile phase titanium oxide | Electricity | 12 | Active |
| US8129288B2 | Combinatorial plasma enhanced deposition techniques | Electricity | 9 | Active |
| US8409354B2 | Vapor based combinatorial processing | Chemistry; Metallurgy | 8 | Active |
| US8821987B2 | Combinatorial processing using a remote plasma source | Chemistry; Metallurgy | 8 | Active |
| US8278735B2 | Yttrium and titanium high-k dielectric films | Electricity | 6 | Active |
| US7968452B2 | Titanium-based high-K dielectric films | Emerging Cross-Sectional Technologies | 5 | Active |
| US8354702B1 | Inexpensive electrode materials to facilitate rutile phase titanium oxide | Electricity | 5 | Active |
| US8153535B1 | Combinatorial plasma enhanced deposition techniques | Electricity | 5 | Active |
| US7927947B2 | Methods for depositing high-K dielectrics | Electricity | 5 | Active |
| US8828821B2 | Fabrication of semiconductor stacks with ruthenium-based materials | Electricity | 4 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.