Semiconductor device having different metal silicide portions and method for fabricating the semiconductor device

US7217657B2 · kind B2 · utility

Assignee

• Advanced Micro Devices, Inc. · US

Inventors

• Karsten Wieczorek · Dresden, DE
• Manfred Horstmann · Dresden, DE
• Rolf Stephan · Dresden, DE

Key dates

• Filing date: Sep 30, 2002
• Grant date: May 15, 2007
• Expiry date: Sep 30, 2022

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D84/038
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A method is disclosed in which differing metal layers are sequentially deposited on silicon-containing regions so that the type and thickness of the metal layers may be adapted to specific characteristics of the underlying silicon-containing regions. Subsequently, a heat treatment is performed to convert the metals into metal silicides so as to improve the electrical conductivity of the silicon-containing regions. In this way, silicide portions may be formed that are individually adapted to specific silicon-containing regions so that device performance of individual semiconductor elements or the overall performance of a plurality of semiconductor elements may be significantly improved. Moreover, a semiconductor device is disclosed comprising at least two silicon-containing regions having formed therein differing silicide portions, wherein at least one silicide portion comprises a noble metal.