GeSOI transistor with low junction current and low junction capacitance and method for making the same
US7221006B2 · kind B2 · utility
32Cited by
1References
19Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 20, 2005 |
| Grant date | May 22, 2007 |
| Priority date | — |
| Expiry date | Apr 20, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/017
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device (101) is provided herein which comprises a substrate (103) comprising germanium. The substrate has source (107) and drain (109) regions defined therein. A barrier layer (111) comprising a first material that has a higher bandgap (Eg) than germanium is disposed at the boundary of at least one of said source and drain regions. At least one of the source and drain regions comprises germanium.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.