Transistor gate electrode having conductor material layer
US7223679B2 · kind B2 · utility
19Cited by
3References
26Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 24, 2003 |
| Grant date | May 29, 2007 |
| Priority date | — |
| Expiry date | Dec 24, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/038
Abstract
Various embodiments of the invention relate to a PMOS device having a transistor channel of silicon germanium material on a substrate, a gate dielectric having a dielectric constant greater than that of silicon dioxide on the channel, a gate electrode conductor material having a work function in a range between a valence energy band edge and a conductor energy band edge for silicon on the gate dielectric, and a gate electrode semiconductor material on the gate electrode conductor material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.