Plasma processing method and plasma processing apparatus
US7224568B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 2, 2005 |
| Grant date | May 29, 2007 |
| Priority date | — |
| Expiry date | Mar 27, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/6833
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
In a plasma processing apparatus using electrostatic chuck, increase of plasma potential is prevented and abnormal discharge is avoided. The plasma processing apparatus comprises an RF source for generating plasma in a vacuum container, another RF source for applying an RF bias power to a sample, a sample stage having an electrostatic chuck electrode, a DC power supply for applying an electrostatic chuck voltage to the electrode, and a controller for shifting the electrostatic chuck voltage to negative by a potential difference of quarter to half of peak-to-peak voltage of the RF bias power for suppressing increase of plasma potential.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.