Nitrogen controlled growth of dislocation loop in stress enhanced transistor
US7226824B2 · kind B2 · utility
9Cited by
13References
11Claims
0Family size
Assignee
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Key dates
| Filing date | Aug 13, 2004 |
| Grant date | Jun 5, 2007 |
| Priority date | — |
| Expiry date | Jan 20, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/038
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Known techniques to improve metal-oxide-semiconductor field effect transistor (MOSFET) performance is to add a high stress dielectric layer to the MOSFET. The high stress dielectric layer introduces stress in the MOSFET that causes electron mobility drive current to increase. This technique increases process complexity, however, and can degrade PMOS performance. Embodiments of the present invention create dislocation loops in the MOSFET substrate to introduce stress and implants nitrogen in the substrate to control the growth of the dislocation loops so that the stress remains beneath the channel of the MOSFET.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.