Indium-boron dual halo MOSFET
US7226843B2 · kind B2 · utility
128Cited by
2References
16Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 30, 2002 |
| Grant date | Jun 5, 2007 |
| Priority date | — |
| Expiry date | Oct 23, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/26586
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method including forming a transistor device having a channel region; implanting a first halo into the channel region; and implanting a second different halo into the channel region. An apparatus including a gate electrode formed on a substrate; a channel region formed in the substrate below the gate electrode and between contact points; a first halo implant comprising a first species in the channel region; and a second halo implant including a different second species in the channel region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.