Nonvolatile memory cell having floating gate, control gate and separate erase gate, an array of such memory cells, and method of manufacturing

US7227217B2 · kind B2 · utility

Assignee

• Silicon Storage Technology, Inc. · US

Inventors

• Amitay Levi · Cupertino, US
• Pavel Klinger · San Jose, US
• Bomy Chen · Cupertino, US
• Hieu Van Tran · San Jose, US
• Dana Lee · Saratoga, US
• Jack Edward Frayer · Ramona, US

Key dates

• Filing date: Feb 28, 2005
• Grant date: Jun 5, 2007
• Expiry date: Jul 29, 2025

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D30/6892

Abstract

A nonvolatile memory cell having a floating gate for the storage of charges thereon has a control gate and a separate erase gate. The cell is programmed by hot channel electron injection and is erased by poly to poly Fowler-Nordheim tunneling. A method for making an array of unidirectional cells in a planar substrate, as well as an array of bidirectional cells in a substrate having a trench, is disclosed. An array of such cells and a method of making such an array is also disclosed.