Electroplated copper interconnection structure, process for making and electroplating bath

US7227265B2 · kind B2 · utility

Assignee

• International Business Machines Corporation · US

Inventors

• Panayotis Andricacos · Ossining, US
• Steven H. Boettcher · Fishkill, US
• Dean S. Chung · South Burlington, US
• Hariklia Deligianni · Alpine, US
• James E. Fluegel · Tivoli, US
• Wilma Jean Horkans · Ossining, US
• Keith Kwietniak
• Peter S. Locke · New York, US
• Christopher C. Parks · Beacon, US
• Soon-Cheon Seo · White Plains, US
• Andrew H. Simon · Fishkill, US
• Erick G. Walton · South Burlington, US

Key dates

• Filing date: Mar 29, 2004
• Grant date: Jun 5, 2007
• Expiry date: Jul 20, 2025

Classification

• Technology area (CPC C): Chemistry; Metallurgy
• CPC primary: C25D5/617
• WIPO field: Surface technology, coating
• WIPO sector: Chemistry

Abstract

Interconnect structures with copper conductors being at least substantially free of internal seams or voids are obtained employing an electroplating copper bath containing dissolved cupric salt wherein the concentration of the salt is at least about 0.4 molar and up to about 0.5 molar concentration of an acid. Also provided are copper damascene structures having an aspect ratio of greater than about 3 and a width of less than about 0.275 μm and via openings filled with electroplated copper than is substantially free of internal seams or voids.