STI process for eliminating silicon nitride liner induced defects
US7229896B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 3, 2005 |
| Grant date | Jun 12, 2007 |
| Priority date | — |
| Expiry date | Oct 27, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76224
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention discloses an improved shallow trench isolation process. A semiconductor substrate having a pad oxide disposed thereon and a pad nitride disposed directly on the pad oxide is provided. A trench is etched, through the pad oxide and the pad nitride, into the semiconductor substrate. A thermal oxide liner is then grown in the trench. A silicon nitride liner is deposited into the trench, wherein the silicon nitride liner covering the pad nitride and the thermal oxide liner has a first stress status. A stress alteration process is performed to alter the silicon nitride liner from the first stress status to a second stress status. A trench fill dielectric having the second stress status is deposited into the trench.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.