Adhesion improvement for low k dielectrics to conductive materials
US7229911B2 · kind B2 · utility
8Cited by
158References
9Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 30, 2004 |
| Grant date | Jun 12, 2007 |
| Priority date | — |
| Expiry date | Aug 30, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods are provided for processing a substrate for depositing an adhesion layer between a conductive material and a dielectric layer. In one aspect, the invention provides a method for processing a substrate including positioning a substrate having a conductive material disposed thereon, introducing a reducing compound or a silicon based compound, exposing the conductive material to the reducing compound or the silicon based compound, and depositing a silicon carbide layer without breaking vacuum.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.