Semiconductor transistor having structural elements of differing materials
US7230264B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 7, 2005 |
| Grant date | Jun 12, 2007 |
| Priority date | — |
| Expiry date | Oct 7, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/822
Abstract
A transistor is formed using a semiconductor substrate and forming a control electrode overlying the semiconductor substrate. A first current electrode is formed within the semiconductor substrate and adjacent the control electrode. The first current electrode has a first predetermined semiconductor material. A second current electrode is formed within the semiconductor substrate and adjacent the control electrode to form a channel within the semiconductor substrate. The second current electrode has a second predetermined semiconductor material that is different from the first predetermined semiconductor material. The first predetermined semiconductor material is chosen to optimize bandgap energy of the first current electrode, and the second predetermined semiconductor material is chosen to optimize strain of the channel.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.