Method of fabrication of a substrate for an epitaxial growth
US7232488B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 20, 2004 |
| Grant date | Jun 19, 2007 |
| Priority date | — |
| Expiry date | Nov 7, 2024 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S117/915
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
The present invention relates to a method of fabrication of a substrate for an epitaxial growth. A relaxed epitaxial base layer is obtained on an auxiliary substrate. The invention allows the fabrication of substrates with a more efficient epitaxial growth of a material with a desired lattice parameter on another material with a different lattice parameter. The material can be grown with a high thermodynamic and crystallographic stability. At least a part of the epitaxial base layer is transferred onto a carrier substrate, forming a base substrate, and growing the material of the epitaxial base layer is further grown on the carrier substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.