Lanthanum hafnium oxide dielectrics
US7235501B2 · kind B2 · utility
628Cited by
165References
58Claims
0Family size
Assignee
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Key dates
| Filing date | Dec 13, 2004 |
| Grant date | Jun 26, 2007 |
| Priority date | — |
| Expiry date | Mar 22, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Dielectric layers containing a lanthanum hafnium oxide layer, where the lanthanum hafnium oxide layer is formed as a structure of one or more monolayers, and methods of fabricating such dielectric layers provide an insulating layer in a variety of structures for use in a wide range of electronic devices.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.