Cleaning solution for photoresist and method for forming pattern using the same
US7238653B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 26, 2003 |
| Grant date | Jul 3, 2007 |
| Priority date | — |
| Expiry date | Jan 26, 2025 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC11D2111/22
- WIPO fieldBasic materials chemistry
- WIPO sectorChemistry
Abstract
Cleaning solutions for photoresist are disclosed which are useful for cleaning a semiconductor substrate in the last step of development when photoresist patterns are formed. Also, methods for forming photoresist patterns using the same are disclosed. The disclosed cleaning solution comprises H2O as a solution, a surfactant which is phosphate-alcoholamine salt represented by Formula 1, and an alcohol compound. The disclosed cleaning solution has lower surface tension than that of distilled water which has been used for conventional cleaning solutions, thereby improving resistance to photoresist pattern collapse and stabilizing the photoresist pattern formation.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.