Nitrogen-containing field effect transistor gate stack containing a threshold voltage control layer formed via deposition of a metal oxide
US7242055B2 · kind B2 · utility
38Cited by
10References
34Claims
0Family size
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Key dates
| Filing date | Nov 15, 2004 |
| Grant date | Jul 10, 2007 |
| Priority date | — |
| Expiry date | Aug 13, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/668
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor structure is provided that includes a Vt stabilization layer between a gate dielectric and a gate electrode. The Vt stabilization layer is capable of stabilizing the structure's threshold voltage and flatband voltage to a targeted value and comprises a nitrided metal oxide, or a nitrogen-free metal oxide, with the proviso that when the Vt stabilization layer comprises a nitrogen-free metal oxide, at least one of the semiconductor substrate or the gate dielectric includes nitrogen. The present invention also provides a method of fabricating such a structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.