Recycling of a wafer comprising a multi-layer structure after taking-off a thin layer
US7256075B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 7, 2005 |
| Grant date | Aug 14, 2007 |
| Priority date | — |
| Expiry date | Mar 7, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76259
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The invention relates to a method of transferring useful layers from a donor wafer which includes a multi-layer structure on the surface of the donor wafer that has a thickness sufficient to form multiple useful layers for subsequent detachment. The layers may be formed of materials having sufficiently different properties such that they may be selectively removed. The layers of material may also include sub-layers that can be selectively removed from each other.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.