Technique for forming a passivation layer prior to depositing a barrier layer in a copper metallization layer

US7259091B2 · kind B2 · utility

Assignee

• Advanced Micro Devices, Inc. · US

Inventors

• Holger Schuehrer · Dresden, DE
• Carsten Hartig · Meerane, DE
• Christin Bartsch · Neustadt in Sachsen, DE
• Kai Frohberg · Meißen, DE

Key dates

• Filing date: Apr 22, 2005
• Grant date: Aug 21, 2007
• Expiry date: Aug 11, 2025

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/76814
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

By performing a wet chemical process after etching a via, contaminations may be removed and a thin passivation layer may be formed that may then be readily removed in a subsequent sputter etch process for forming a barrier/adhesion layer. In a particular embodiment, the wet chemical process may be performed on the basis of fluoric acid and triazole or a compound thereof.