Strained-semiconductor-on-insulator device structures
US7259388B2 · kind B2 · utility
12Cited by
227References
18Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 3, 2005 |
| Grant date | Aug 21, 2007 |
| Priority date | — |
| Expiry date | Jul 19, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/62
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The benefits of strained semiconductors are combined with silicon-on-insulator approaches to substrate and device fabrication.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.