High efficiency group III nitride-silicon carbide light emitting diode
US7259402B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 22, 2004 |
| Grant date | Aug 21, 2007 |
| Priority date | — |
| Expiry date | Sep 22, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/01335
Abstract
A method and resulting structures are disclosed for fabricating a high efficiency high extraction light emitting diode suitable for packaging. The method includes the steps of adding a light emitting active portion of wide-bandgap semiconductor material to a conductive silicon carbide substrate, joining the added active portion to a conductive sub-mounting structure, and removing a portion of the silicon carbide substrate opposite the added active portion to thereby reduce the overall thickness of the joined substrate, active portion and sub-mounting structure. The resulting the sub-mounting structure can be joined to a lead frame with the active portion positioned between the silicon carbide substrate and the sub-mounting structure to thereby use the sub-mounting structure to separate the active portion from the lead frame and avoid undesired electrical contact between the active portion and the lead frame.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.