Jayesh Bharathan
17Patents
6h-index
19Co-inventors
59Inventor score
Filing activity: Jun 27, 2002 → Feb 19, 2014
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6747298B2 | Collets for bonding of light emitting diodes having shaped substrates | Electricity | 71 | Expired |
| US7259402B2 | High efficiency group III nitride-silicon carbide light emitting diode | Electricity | 47 | Expired |
| US6888167B2 | Flip-chip bonding of light emitting devices and light emitting devices suitable for flip-chip bonding | Electricity | 46 | Expired |
| US9666772B2 | High powered light emitter packages with compact optics | Electricity | 26 | Expired |
| US7259033B2 | Flip-chip bonding of light emitting devices | Electricity | 13 | Expired |
| US7679203B2 | Methods of forming thermoelectric devices using islands of thermoelectric material and related structures | Emerging Cross-Sectional Technologies | 6 | Active |
| US8183588B2 | High efficiency group III nitride LED with lenticular surface | Electricity | 5 | Active |
| US8174037B2 | High efficiency group III nitride LED with lenticular surface | Electricity | 4 | Expired |
| US7341175B2 | Bonding of light emitting diodes having shaped substrates | Electricity | 1 | Expired |
| US8154039B2 | High efficiency group III nitride LED with lenticular surface | Electricity | 1 | Active |
| US8878209B2 | High efficiency group III nitride LED with lenticular surface | Electricity | 0 | Active |
| US8759868B2 | Ultra-thin ohmic contacts for p-type nitride light emitting devices | Electricity | 0 | Active |
| US7608860B2 | Light emitting devices suitable for flip-chip bonding | Electricity | 0 | Active |
| US8044425B2 | Ultra-thin ohmic contacts for p-type nitride light emitting devices | General | 0 | Revoked |
| US8686460B2 | Ultra-thin ohmic contacts for p-type nitride light emitting devices | General | 0 | Revoked |
| US8089090B2 | Ultra-thin ohmic contacts for p-type nitride light emitting devices | Electricity | 0 | Active |
| US8692267B2 | High efficiency Group III nitride LED with lenticular surface | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.