Method of manufacturing a semiconductor integrated circuit device
US7262101B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 13, 2004 |
| Grant date | Aug 28, 2007 |
| Priority date | — |
| Expiry date | Aug 13, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B12/485
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of manufacturing a semiconductor integrated circuit device comprising forming a silicon oxide film as thin as 5 nm or less on the surfaces of p type wells and n type wells by wet oxidizing a substrate, heating the substrate in an atmosphere containing about 5% of an NO gas to introduce nitrogen into the silicon oxide film so as to form a silicon oxynitride film, exposing the substrate to a nitrogen plasma atmosphere to further introduce nitrogen into the silicon oxynitride film in order to form a silicon oxynitride gate insulating film having a first peak concentration near the interface with the substrate and a second peak concentration near the surface thereof. Thereby, the concentration of nitrogen in the gate insulating film is increased without raising the concentration of nitrogen near the interface between the substrate and the gate insulating film to a higher level than required.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.