Semiconductor device with silicided source/drains
US7262105B2 · kind B2 · utility
8Cited by
10References
25Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 21, 2003 |
| Grant date | Aug 28, 2007 |
| Priority date | — |
| Expiry date | May 4, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/021
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In a semiconductor device, a relatively deep germanium implant and activation thereof precedes deposition of the nickel for nickel silicide formation. The activation of the germanium causes the lattice constant in the region of the implant to be increased over the lattice constant of the background substrate, which is preferably silicon. The effect is that the lattice so altered avoids formation of nickel disilicide. The result is that the nickel silicide spiking is avoided.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.