Method of forming low-resistivity tungsten interconnects

US7262125B2 · kind B2 · utility

Assignee

• Novellus Systems, Inc. · US

Inventors

• Panya Wongsenakhum · San Francisco, US
• Aaron R. Fellis · San Jose, US
• Kaihan Ashtiani · San Jose, US
• Karl B. Levy · Los Altos, US
• Juwen Gao · San Jose, US
• Joshua Collins · Sunnyvale, US
• Junghwan Sung · Los Altos, US
• Lana Hiului Chan · Santa Clara, US

Key dates

• Filing date: Mar 31, 2004
• Grant date: Aug 28, 2007
• Expiry date: Mar 31, 2024

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/76876
• WIPO field: Surface technology, coating
• WIPO sector: Chemistry

Abstract

Methods and apparatus for preparing a low-resistivity tungsten film on a substrate are provided. Methods involve the formation of a tungsten nucleation layer on a substrate using pulsed nucleation layer (PNL) techniques and depositing a bulk tungsten layer thereon. Methods for forming the tungsten nucleation layer involve the use of a boron-containing species, a tungsten-containing precursor, and optionally, a silane. The methods described are particularly useful for applications where thin, low resistivity films are desired, such as interconnect applications.