Pattern inspecting method and apparatus thereof, and pattern inspecting method on basis of electron beam images and apparatus thereof
US7263216B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 11, 2003 |
| Grant date | Aug 28, 2007 |
| Priority date | — |
| Expiry date | Sep 11, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/2817
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A pattern inspecting method and apparatus for inspecting a defect or defective candidate of patterns on a sample includes picking up an image of a sample by shifting a sampling position on the sample, measuring geometric distortion in an image of a standard sample, beforehand, and defining a size for which the measured geometric distortion is neglectable, obtaining a first image of the sample and a second image to be compared with the first image, dividing the first image and the second stage into images of a division unit having a size not greater than the defined size, comparing a divided image of the first image with a divided image of the second image, and for calculating a difference in gradation values between both of the divided images. The defect or the defect candidate of the sample is extracted in accordance with the difference in the gradation values.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.