Reduction of copper dewetting by transition metal deposition
US7265048B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 1, 2005 |
| Grant date | Sep 4, 2007 |
| Priority date | — |
| Expiry date | Aug 25, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2221/1089
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method and apparatus for forming layers on a substrate comprising depositing a metal seed layer on a substrate surface having apertures, depositing a transition metal layer over the copper seed layer, and depositing a bulk metal layer over the transition metal layer. Also a method and apparatus for forming a via through a dielectric to reveal metal at the base of the via, depositing a transition metal layer, and depositing a first metal layer on the transition metal layer. Additionally, a method and apparatus for depositing a transition metal layer on an exposed metal surface, and depositing a layer thereover selected from the group consisting of a capping layer and a low dielectric constant layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.