Bottom conductor for integrated MRAM
US7265404B2 · kind B2 · utility
5Cited by
8References
8Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 30, 2005 |
| Grant date | Sep 4, 2007 |
| Priority date | — |
| Expiry date | Aug 30, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B61/22
Abstract
A structure that is well suited to connecting an MTJ device to a CMOS integrated circuit is described. It is built out of three layers. The bottom layer serves as a seed layer for the center layer, which is alpha tantalum, while the third, topmost, layer is selected for its smoothness, its compatibility with the inter-layer dielectric materials, and its ability to protect the underlying tantalum. A method for its formation is also described.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.