Wei Cao
41Patents
11h-index
95Co-inventors
78Inventor score
Filing activity: Oct 31, 2000 → Sep 26, 2023
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6498091B1 | Method of using a barrier sputter reactor to remove an underlying barrier layer | Electricity | 520 | Expired |
| US6607976B2 | Copper interconnect barrier layer structure and formation method | Electricity | 241 | Expired |
| US6660622B2 | Process for removing an underlying layer and depositing a barrier layer in one reactor | Electricity | 107 | Expired |
| US6730420B1 | Magnetic thin film recording media having extremely low noise and high thermal stability | Emerging Cross-Sectional Technologies | 73 | Expired |
| US6953742B2 | Tantalum barrier layer for copper metallization | Electricity | 63 | Expired |
| US6972267B2 | Sequential deposition of tantalum nitride using a tantalum-containing precursor and a nitrogen-containing precursor | Electricity | 52 | Expired |
| US8492169B2 | Magnetic tunnel junction for MRAM applications | Electricity | 49 | Active |
| US6811814B2 | Method for growing thin films by catalytic enhancement | Chemistry; Metallurgy | 30 | Expired |
| US7122386B1 | Method of fabricating contact pad for magnetic random access memory | Electricity | 19 | Expired |
| US9455400B2 | Magnetic tunnel junction for MRAM applications | Electricity | 13 | Active |
| US8450119B2 | Magnetic tunnel junction patterning using Ta/TaN as hard mask | Electricity | 12 | Expired |
| US7576002B2 | Multi-step barrier deposition method | Electricity | 11 | Expired |
| US8786036B2 | Magnetic tunnel junction for MRAM applications | Electricity | 10 | Active |
| US9159908B2 | Composite free layer within magnetic tunnel junction for MRAM applications | Electricity | 5 | Active |
| US7265404B2 | Bottom conductor for integrated MRAM | Electricity | 5 | Expired |
| US7358100B2 | Bottom conductor for integrated MRAM | Electricity | 5 | Active |
| US8969982B2 | Bottom electrode for MRAM device | Electricity | 4 | Active |
| US7838436B2 | Bottom electrode for MRAM device and method to fabricate it | Electricity | 3 | Active |
| US8273666B2 | Process to fabricate bottom electrode for MRAM device | Electricity | 2 | Active |
| US10176910B2 | Non-oriented silicon steel and manufacturing process thereof | Chemistry; Metallurgy | 1 | Active |
| US8736004B2 | Magnetic tunnel junction for MRAM applications | Electricity | 1 | Active |
| US11061501B2 | Touch panel and manufacturing method thereof | Physics | 1 | Active |
| US7514358B2 | Sequential deposition of tantalum nitride using a tantalum-containing precursor and a nitrogen-containing precursor | Electricity | 1 | Active |
| US7867896B2 | Sequential deposition of tantalum nitride using a tantalum-containing precursor and a nitrogen-containing precursor | Electricity | 1 | Active |
| US10871682B2 | Method for manufacturing display panel, display panel and display device | Physics | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.